Photonics & Microsystems

OCR 6385

VCSEL laser technology is a new laser advance for Solid State Lighting suitable for LED manufacturers, applications include automobile headlighting.

OCR 5248

Coherent Perfect Absorber that completely absorbs incoming radiation with zero reflection, applications in free-space and on-chip optical communications.

OCR 937

High power mid-IR laser >1W with high directionality, co-developed with Princeton University.

OCR 4952

Light can exert a force through two separate mechanisms: radiation pressure, which exerts a force in the direction of the light, and a gradient force, which acts in a transverse direction. Yale researchers have demonstrated for the first time that the transverse gradient force can be harnessed in integrated silicon photonic circuits. A free standing optical waveguide is driven by the gradient optical force generated by asymmetrically engineering the lightwave mode in the waveguide. Due to the strong confinement of light in the submicron waveguide, the optical force is significantly enhanced at small dimensions, with the level of actuation comparable to electrostatic and piezoelectric methods. This device paves the way for optically-actuated nanomechanical devices operating under a new physical principal - waveguide light force - that is fundamentally different from conventional appoaches.

OCR 5748

Imperfect modal matching and finite photon absorption rates have usually limited the maximum attainable detection efficiency of single photon detectors. Yale University researchers have demonstrated a high quantum efficiency single photon detector (>90%), fully embedded in a scalable, low loss silicon photonic circuit at 4 Kelvin that provides ultrashort timing jitter of 18ps at multi-GHz detection rates. The dark count rate also drops to below 0.1Hz at optimal biasing. The detector's novel evanescent waveguide drastically increases the absorption length for incoming photons. The fibre based detector couples in light with low insertion loss. The energy resolution is as low as 1x10-19W/Hz1/2.

OCR 5939

Yale researchers have now discovered a way to replace all the spectrometer components and housing with a multimode fiber, transforming the humble optical fiber into a distinct platform that offers a new generation of high resolution spectrometers with reduced size, weight, and cost. The fiber spectrometer technology also lends itself to the development of high resolution hyperspectral imaging systems--optical systems that collect spectrally resolved images of objects and scenes, with an equally wide range of applications spanning medical imaging to earth observation.

OCR 5943

Preparation of device quality Gallium Nitride through lateral guided growth and on oxide on Si that integrates two mainstream technologies: Silicon-based microelectronics, and Gallium Nitride-based power-electronics.

OCR 5811

This technology is a crystalline semiconductor device fabrication method that is capable of integrating generic substrates and that enables growth of single crystalline semiconductor without a seed (from fiber-textured thin film).

OCR 4977

Yale researchers have developed an all N-channel CMOS (Complementary Metal-Oxide-Semiconductor) technology that overcomes the problem of low hole mobility. Yale’s novel technology utilizes the double channel capability of a MOSFET built with a SOI (semiconductor on insulator) structure to eliminate P-channels and replace them with N-channels, resulting in increased switching speed. This technology can be implemented with both silicon and III-V semiconductors.