Photonics & Microsystems
VCSEL laser technology is a new laser advance for Solid State Lighting suitable for LED manufacturers, applications include automobile headlighting.
A simple method to fabricate GaN nanomembranes. Similar to Si(GaAs) nanomembrane, the technique has now been enabled at Yale for GaN.
Coherent Perfect Absorber that completely absorbs incoming radiation with zero reflection, applications in free-space and on-chip optical communications.
High power mid-IR laser >1W with high directionality, co-developed with Princeton University.
Yale researchers at the Tang lab have developed wideband, carrier-free photonic circuits for ultra-low power and high speed signal processing at the CPU level.
Yale researchers have now discovered a way to replace all the spectrometer components and housing with a multimode fiber, transforming the humble optical fiber into a distinct platform that offers a new generation of high resolution spectrometers with reduced size, weight, and cost. The fiber spectrometer technology also lends itself to the development of high resolution hyperspectral imaging systems--optical systems that collect spectrally resolved images of objects and scenes, with an equally wide range of applications spanning medical imaging to earth observation.
Preparation of device quality Gallium Nitride through lateral guided growth and on oxide on Si that integrates two mainstream technologies: Silicon-based microelectronics, and Gallium Nitride-based power-electronics.
This technology is a crystalline semiconductor device fabrication method that is capable of integrating generic substrates and that enables growth of single crystalline semiconductor without a seed (from fiber-textured thin film).
Yale researchers have developed an all N-channel CMOS (Complementary Metal-Oxide-Semiconductor) technology that overcomes the problem of low hole mobility. Yale’s novel technology utilizes the double channel capability of a MOSFET built with a SOI (semiconductor on insulator) structure to eliminate P-channels and replace them with N-channels, resulting in increased switching speed. This technology can be implemented with both silicon and III-V semiconductors.