Materials & Nanotechnology
Yale researchers have identified that the acute inflammatory response to biomaterials can be limited by inhibition of inflammasome-related pathways.
~13nm nanowires with advantageous utility in electro-catalytic applications, e.g., fuel cells.
Polymer thin film spraying and coating techniques for enhanced power conversion in transparent electrodes, battery anodes and carbon photovoltaics.
More energy efficient capacitor-less ferroelectric DRAM devices replace end-of-life volatile memory.
A transition metal substituted, amorphous mesoporous silica framework with a high degree of structural order and a narrow pore diameter distribution (± 0.15 nm FWHM) was synthesized and used for the templated growth of single walled carbon nanotubes (SWNT). The physical properties of the SWNT (diameter, diameter distribution, electronic characteristic) can be controlled by the template pore size and the pore wall chemistry. The SWNT can find applications, for example, in chemical sensors and nanoscale electronic devices, such as transistors and crossbar switches.
A process for growth of boron-based nanostructures, such as nanotubes and nanowires, with a controlled diameter and with controlled chemical (such as composition, doping) as well as physical (such as electrical and superconducting) properties is described. The boron nanostructures are grown on a metal-substituted MCM-41 template with pores having a uniform pore diameter of less than approximately 4 nm, and can be doped with a Group Ia or Group IIa electron donor element during or after growth of the nanostructure. Preliminary data based on magnetic susceptibility measurements suggest that Mg-doped boron nanotubes have a superconducting transition temperature on the order of 100 K.
A transition metal substituted, amorphous mesoporous silica framework with a high degree of structural order and a narrow pore diameter distribution (.+-.0.15 nm FWHM) was synthesized and used for the templated growth of GaN nanostructures, such as single wall nanotubes, nanopipes and nanowires. The physical properties of the GaN nanostructures (diameter, diameter distribution, electronic characteristic) can be controlled by the template pore diameter and the pore wall chemistry. GaN nanostructures can find applications, for example, in nanoscale electronic devices, such as field-emitters, and in chemical sensors.