Materials & Nanotechnology
Yale researchers have identified that the acute inflammatory response to biomaterials can be limited by inhibition of inflammasome-related pathways.
~13nm nanowires with advantageous utility in electro-catalytic applications, e.g., fuel cells.
Polymer thin film spraying and coating techniques for enhanced power conversion in transparent electrodes, battery anodes and carbon photovoltaics.
More energy efficient capacitor-less ferroelectric DRAM devices replace end-of-life volatile memory.
A process for growth of boron-based nanostructures, such as nanotubes and nanowires, with a controlled diameter and with controlled chemical (such as composition, doping) as well as physical (such as electrical and superconducting) properties is described. The boron nanostructures are grown on a metal-substituted MCM-41 template with pores having a uniform pore diameter of less than approximately 4 nm, and can be doped with a Group Ia or Group IIa electron donor element during or after growth of the nanostructure. Preliminary data based on magnetic susceptibility measurements suggest that Mg-doped boron nanotubes have a superconducting transition temperature on the order of 100 K.
A transition metal substituted, amorphous mesoporous silica framework with a high degree of structural order and a narrow pore diameter distribution (.+-.0.15 nm FWHM) was synthesized and used for the templated growth of GaN nanostructures, such as single wall nanotubes, nanopipes and nanowires. The physical properties of the GaN nanostructures (diameter, diameter distribution, electronic characteristic) can be controlled by the template pore diameter and the pore wall chemistry. GaN nanostructures can find applications, for example, in nanoscale electronic devices, such as field-emitters, and in chemical sensors.
Yale researchers have developed an all N-channel CMOS (Complementary Metal-Oxide-Semiconductor) technology that overcomes the problem of low hole mobility. Yale’s novel technology utilizes the double channel capability of a MOSFET built with a SOI (semiconductor on insulator) structure to eliminate P-channels and replace them with N-channels, resulting in increased switching speed. This technology can be implemented with both silicon and III-V semiconductors.
Advances in the precision net-shaping, micromolding, and fabrication of high-aspect-ratio metal structures have greatly expanded the range of applications for micro-electromechanical and nanoelectromechanical systems (MEMS and NEMS). Bulk metallic glasses (BMGs) have unique properties that make them ideal for micro- and nano-structure applications. However, they have been limited by the types of master molds available. Yale University researchers and their collaborators at the University of California have developed a system to fabricate precise molds and microparts from bulk metallic glasses (BMGs) using low cost carbon molds (BMG*CMEMS). Unlike silicon or polymer molds, these carbon molds are stable at the high temperatures which required for the thermoplastic forming (TPF) of BMGs.